Magnetoresistance saturation in Si MOSFETs in a parallel pulsed magnetic field up to 40 T

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 16, 2003, Pages

  Broto, J M ^a   Goiran, M ^a   Rakoto, H ^a   Gold, A ^b   Dolgopolov, V T ^c  

^a Lab Natl Champs Magnetiques Pulses   (France)

^b CEMES CNRS   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE; SILICON;

ACCELERATION; ARTICLE; ELECTRON; GAS; MAGNETIC FIELD; MEASUREMENT; SEMICONDUCTOR;

EID: 1842646646     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.161304     Document Type: Article

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