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Volumn 16, Issue 1-2, 2002, Pages 322-327
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Sims depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperature
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COPPER;
SILICON DIOXIDE;
TANTALUM;
CONFERENCE PAPER;
DIFFUSION;
HIGH TEMPERATURE;
MASS SPECTROMETRY;
REACTION ANALYSIS;
TEMPERATURE DEPENDENCE;
THICKNESS;
VACUUM;
X RAY DIFFRACTION;
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EID: 0037138059
PISSN: 02179792
EISSN: None
Source Type: Journal
DOI: 10.1142/s0217979202009822 Document Type: Conference Paper |
Times cited : (6)
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References (6)
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