Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 68, Issue 2, 1999, Pages 99-103

  Lee, Y K ^a   Maung Latt, K ^a   Jaehyung, K ^a   Osipowicz, T ^b   Lee, K ^c  

^a SCHOOL OF APPLIED SCIENCE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEPOSITION; DIFFUSION IN SOLIDS; MULTILAYERS; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS; IONIZED METAL PLASMA (IMP) DEPOSITION;

TANTALUM;

EID: 0033331037     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00517-6     Document Type: Article

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