Effect of curvature and stress on reaction rates at solid interfaces

Applied Physics Letters

Volumn 73, Issue 16, 1998, Pages 2328-2330

  Tersoff, J ^a   Tu, Yuhai ^a   Grinstein, G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000645807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121812     Document Type: Article

References (11)

1. See, e.g., D.-B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices ED-35, 25 (1988).
2. W. C. Johnson, J. Appl. Phys. 68, 1252 (1990);
3. F. d'Heurle (private communication).
4. C. H. Chiu and L. B. Freund, Mater. Res. Soc. Symp. Proc. 436, 517 (1997);
5. W. Barvosa-Carter, M. J. Aziz, L. J. Gray, and T. Kaplan, Phys. Rev. Lett. 81, 1445 (1998).
6. M. J. Aziz, P. C. Sabin, and G.-Q. Lu, Phys. Rev. B 44, 9812 (1991);
7. W. Barvosa-Carter and M. J. Aziz (unpublished).
8. Two distinct curvature terms have been suggested previously, in Ref. 3. However, there they are apparently introduced as an assumption of the model, rather than being derived on explicit physical grounds as we do here.
9. mn must be a scalar times the identity matrix.
10. X. Chen and J. M. Gibson, Appl. Phys. Lett. 70, 1462 (1997).
11. V. Senez et al., IEEE Trans. Electron Devices 43, 720 (1996).