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Volumn 504, Issue 1-2, 2006, Pages 227-230
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Characterization of copper chemical mechanical polishing (CMP) in nitric acid-hydrazine based slurry for microelectronic fabrication
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Author keywords
Chemical mechanical polishing; Copper; Hydrazine
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Indexed keywords
ETCHING;
HYDRAZINE;
NITRIC ACID;
SLURRIES;
SURFACE ROUGHNESS;
INHIBITING EFFECT;
POLISH RATE;
STATIC ETCH RATE;
CHEMICAL MECHANICAL POLISHING;
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EID: 33644896780
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.09.128 Document Type: Conference Paper |
Times cited : (21)
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References (22)
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