Tentative analysis of Swirl defects in silicon crystals

Journal of Crystal Growth

Volumn 213, Issue 3-4, 2000, Pages 276-282

  Fan, T W ^a   Qian, J J ^a   Wu, J ^a   Lin, L Y ^a   Yuan, J ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electron energy loss spectroscopy; Silicon; Swirl defect

Indexed keywords

EID: 0345848824     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00350-X     Document Type: Article

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