-
1
-
-
0002200661
-
21% efficient solar cells processed from czochralski grown silicon
-
Nice, France
-
J. Knobloch, S. W. Glunz, V. Henninger, W. Warta, W. Wettling, F. Schümann, W. Schmidt, A. Endrös, and K. A. Münzer, "21% efficient solar cells processed from Czochralski grown silicon", Proc. 13th EC PVSEC, Nice, France, 1995, pp. 9-12.
-
(1995)
Proc. 13th EC PVSEC
, pp. 9-12
-
-
Knobloch, J.1
Glunz, S.W.2
Henninger, V.3
Warta, W.4
Wettling, W.5
Schümann, F.6
Schmidt, W.7
Endrös, A.8
Münzer, K.A.9
-
2
-
-
0015973475
-
Investigation of photon and thermal induced changes in silicon solar cells
-
Palo Alto, California, USA
-
H. Fischer and W. Pschunder, "Investigation of photon and thermal induced changes in silicon solar cells", Proc. 10th IEEE PVSC, Palo Alto, California, USA, 1973, pp. 404-411.
-
(1973)
Proc. 10th IEEE PVSC
, pp. 404-411
-
-
Fischer, H.1
Pschunder, W.2
-
3
-
-
0002357721
-
On the degradation of Cz-silicon solar cells
-
Vienna, Austria
-
S. W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling, "On the degradation of Cz-silicon solar cells", Proc. 2nd WCPEC, Vienna, Austria, 1998, pp. 1343-1346.
-
(1998)
Proc. 2nd WCPEC
, pp. 1343-1346
-
-
Glunz, S.W.1
Rein, S.2
Warta, W.3
Knobloch, J.4
Wettling, W.5
-
4
-
-
0031370370
-
Investigation of carrier lifetime instabilities in Cz-grown silicon
-
Anaheim, California, USA
-
J. Schmidt, A. G. Aberle, and R. Hezel, "Investigation of carrier lifetime instabilities in Cz-grown silicon", Proc. 26th IEEE PVSC, Anaheim, California, USA, 1997, pp. 13-18.
-
(1997)
Proc. 26th IEEE PVSC
, pp. 13-18
-
-
Schmidt, J.1
Aberle, A.G.2
Hezel, R.3
-
6
-
-
0003154137
-
Analysis of the high temperature improvement of czochralski silicon
-
Glasgow, UK
-
S. Rein, J. Knobloch, and S. W. Glunz, "Analysis of the high temperature improvement of Czochralski silicon", Proc. 16th EC PVSEC, Glasgow, UK, 2000.
-
(2000)
Proc. 16th EC PVSEC
-
-
Rein, S.1
Knobloch, J.2
Glunz, S.W.3
-
7
-
-
0002228578
-
Stable czochralski silicon solar cells using gallium-doped base material
-
Glasgow, UK
-
S. W. Glunz, S. Rein, and J. Knobloch, "Stable Czochralski silicon solar cells using gallium-doped base material", Proc. 16th EC PVSEC, Glasgow, UK, 2000.
-
(2000)
Proc. 16th EC PVSEC
-
-
Glunz, S.W.1
Rein, S.2
Knobloch, J.3
-
8
-
-
0033365078
-
Comparison of boron and gallium doped p-type czochralski silicon for photovoltaic application
-
S. W. Glunz, S. Rein, J. Knobloch, W. Wettling, and T. Abe, "Comparison of boron and gallium doped p-type Czochralski silicon for photovoltaic application", Progr. Photovolt., 7, 1999, pp. 463-469.
-
(1999)
Progr. Photovolt.
, vol.7
, pp. 463-469
-
-
Glunz, S.W.1
Rein, S.2
Knobloch, J.3
Wettling, W.4
Abe, T.5
-
9
-
-
0030410191
-
Solar cells with efficiencies above 21% processed from czochralski grown silicon
-
Washington DC, USA
-
J. Knobloch, S. W. Glunz, D. Biro, W. Warta, E. Schaffer, and W. Wettling, "Solar cells with efficiencies above 21% processed from Czochralski grown silicon", Proc. 25th IEEE PVSC, Washington DC, USA, 1996, pp. 405-408.
-
(1996)
Proc. 25th IEEE PVSC
, pp. 405-408
-
-
Knobloch, J.1
Glunz, S.W.2
Biro, D.3
Warta, W.4
Schaffer, E.5
Wettling, W.6
-
10
-
-
0013132562
-
Permanent reduction of excess-carrier-induced recombination centers in solar garde czochralski silicon by a short yet effective anneal
-
Glasgow, UK
-
H. Nagel, A. Merkle, A. Metz, and R. Hezel, "Permanent reduction of excess-carrier-induced recombination centers in solar garde Czochralski silicon by a short yet effective anneal", Proc. 16th EC PVSEC, Glasgow, UK, 2000.
-
(2000)
Proc. 16th EC PVSEC
-
-
Nagel, H.1
Merkle, A.2
Metz, A.3
Hezel, R.4
-
12
-
-
0031388370
-
PC1D version 5: 32-bit solar cell modeling on personal computers
-
Anaheim, California, USA
-
D. A. Clugston and P. A. Basore, "PC1D version 5: 32-bit solar cell modeling on personal computers", Proc. 26th IEEE PVSC, Anaheim, California, USA, 1997, pp. 207-210.
-
(1997)
Proc. 26th IEEE PVSC
, pp. 207-210
-
-
Clugston, D.A.1
Basore, P.A.2
-
13
-
-
6344240587
-
The recombination velocity of boron diffused silicon surfaces
-
Barcelona
-
A. Cuevas, M. Stuckings, J. Lau, and M. Petravic, "The recombination velocity of boron diffused silicon surfaces", Proc. 14th EC PVSEC, Barcelona, 1997, pp. 2416-2419.
-
(1997)
Proc. 14th EC PVSEC
, pp. 2416-2419
-
-
Cuevas, A.1
Stuckings, M.2
Lau, J.3
Petravic, M.4
-
14
-
-
84949596104
-
-
J. Y. Lee and et al., to be published, 2000
-
J. Y. Lee and et al., to be published, 2000.
-
-
-
|