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Volumn 2000-January, Issue , 2000, Pages 201-204

Strategies for improving the efficiency of CZ-silicon solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); EFFICIENCY; GALLIUM; OXYGEN; RAPID THERMAL PROCESSING; SILICON; SOLAR CELLS;

EID: 33644909231     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915789     Document Type: Conference Paper
Times cited : (12)

References (14)
  • 2
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    • Investigation of photon and thermal induced changes in silicon solar cells
    • Palo Alto, California, USA
    • H. Fischer and W. Pschunder, "Investigation of photon and thermal induced changes in silicon solar cells", Proc. 10th IEEE PVSC, Palo Alto, California, USA, 1973, pp. 404-411.
    • (1973) Proc. 10th IEEE PVSC , pp. 404-411
    • Fischer, H.1    Pschunder, W.2
  • 4
    • 0031370370 scopus 로고    scopus 로고
    • Investigation of carrier lifetime instabilities in Cz-grown silicon
    • Anaheim, California, USA
    • J. Schmidt, A. G. Aberle, and R. Hezel, "Investigation of carrier lifetime instabilities in Cz-grown silicon", Proc. 26th IEEE PVSC, Anaheim, California, USA, 1997, pp. 13-18.
    • (1997) Proc. 26th IEEE PVSC , pp. 13-18
    • Schmidt, J.1    Aberle, A.G.2    Hezel, R.3
  • 6
    • 0003154137 scopus 로고    scopus 로고
    • Analysis of the high temperature improvement of czochralski silicon
    • Glasgow, UK
    • S. Rein, J. Knobloch, and S. W. Glunz, "Analysis of the high temperature improvement of Czochralski silicon", Proc. 16th EC PVSEC, Glasgow, UK, 2000.
    • (2000) Proc. 16th EC PVSEC
    • Rein, S.1    Knobloch, J.2    Glunz, S.W.3
  • 7
    • 0002228578 scopus 로고    scopus 로고
    • Stable czochralski silicon solar cells using gallium-doped base material
    • Glasgow, UK
    • S. W. Glunz, S. Rein, and J. Knobloch, "Stable Czochralski silicon solar cells using gallium-doped base material", Proc. 16th EC PVSEC, Glasgow, UK, 2000.
    • (2000) Proc. 16th EC PVSEC
    • Glunz, S.W.1    Rein, S.2    Knobloch, J.3
  • 8
    • 0033365078 scopus 로고    scopus 로고
    • Comparison of boron and gallium doped p-type czochralski silicon for photovoltaic application
    • S. W. Glunz, S. Rein, J. Knobloch, W. Wettling, and T. Abe, "Comparison of boron and gallium doped p-type Czochralski silicon for photovoltaic application", Progr. Photovolt., 7, 1999, pp. 463-469.
    • (1999) Progr. Photovolt. , vol.7 , pp. 463-469
    • Glunz, S.W.1    Rein, S.2    Knobloch, J.3    Wettling, W.4    Abe, T.5
  • 9
    • 0030410191 scopus 로고    scopus 로고
    • Solar cells with efficiencies above 21% processed from czochralski grown silicon
    • Washington DC, USA
    • J. Knobloch, S. W. Glunz, D. Biro, W. Warta, E. Schaffer, and W. Wettling, "Solar cells with efficiencies above 21% processed from Czochralski grown silicon", Proc. 25th IEEE PVSC, Washington DC, USA, 1996, pp. 405-408.
    • (1996) Proc. 25th IEEE PVSC , pp. 405-408
    • Knobloch, J.1    Glunz, S.W.2    Biro, D.3    Warta, W.4    Schaffer, E.5    Wettling, W.6
  • 10
    • 0013132562 scopus 로고    scopus 로고
    • Permanent reduction of excess-carrier-induced recombination centers in solar garde czochralski silicon by a short yet effective anneal
    • Glasgow, UK
    • H. Nagel, A. Merkle, A. Metz, and R. Hezel, "Permanent reduction of excess-carrier-induced recombination centers in solar garde Czochralski silicon by a short yet effective anneal", Proc. 16th EC PVSEC, Glasgow, UK, 2000.
    • (2000) Proc. 16th EC PVSEC
    • Nagel, H.1    Merkle, A.2    Metz, A.3    Hezel, R.4
  • 12
    • 0031388370 scopus 로고    scopus 로고
    • PC1D version 5: 32-bit solar cell modeling on personal computers
    • Anaheim, California, USA
    • D. A. Clugston and P. A. Basore, "PC1D version 5: 32-bit solar cell modeling on personal computers", Proc. 26th IEEE PVSC, Anaheim, California, USA, 1997, pp. 207-210.
    • (1997) Proc. 26th IEEE PVSC , pp. 207-210
    • Clugston, D.A.1    Basore, P.A.2
  • 13
    • 6344240587 scopus 로고    scopus 로고
    • The recombination velocity of boron diffused silicon surfaces
    • Barcelona
    • A. Cuevas, M. Stuckings, J. Lau, and M. Petravic, "The recombination velocity of boron diffused silicon surfaces", Proc. 14th EC PVSEC, Barcelona, 1997, pp. 2416-2419.
    • (1997) Proc. 14th EC PVSEC , pp. 2416-2419
    • Cuevas, A.1    Stuckings, M.2    Lau, J.3    Petravic, M.4
  • 14
    • 84949596104 scopus 로고    scopus 로고
    • J. Y. Lee and et al., to be published, 2000
    • J. Y. Lee and et al., to be published, 2000.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.