Growth of InAs quantum dots on vicinal GaAs (1 0 0) substrates by metalorganic chemical vapor deposition and their optical properties

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 477-484

  Liang, S ^a   Zhu, H L ^a   Pan, J Q ^a   Ye, X L ^a   Wang, W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Bimodal size distribution; A3. Metalorganic vapor phase epitaxy; A3. Self assembled quantum dots; B1. Indium arsenide

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BIMODAL SIZE DISTRIBUTION; INDIUM ARSENIDE; SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644851828     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.070     Document Type: Article

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