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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1280-1284
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Simulation and observation of the step bunching process grown on GaAs (001) vicinal surface by metalorganic vapor phase epitaxy
a
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Author keywords
AFM; GaAs; III V semiconductor; Monte Carlo simulation; Step bunching; Vicinal surface
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Indexed keywords
ACTIVATION ENERGY;
ATOMIC FORCE MICROSCOPY;
COMPUTER SIMULATION;
EPITAXIAL GROWTH;
METALLORGANIC VAPOR PHASE EPITAXY;
MONOLAYERS;
MONTE CARLO METHODS;
SEMICONDUCTOR SUPERLATTICES;
SUBSTRATES;
SURFACES;
GROWTH TEMPERATURE;
LOW PRESSURE METALLORGANIC VAPOR PHASE;
STEP BUNCHING PROCESSES;
TRIETHYLALUMINUM;
TRIETHYLGALLIUM;
VICINAL SURFACE;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0030080142
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.1280 Document Type: Article |
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Times cited : (50)
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References (13)
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