Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy

Nanotechnology

Volumn 12, Issue 4, 2001, Pages 425-429

  Karpovich, I A ^a   Baidus, N V ^a   Zvonkov, B N ^a   Morozov, S V ^a   Filatov, D O ^a   Zdoroveishev, A V ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOELECTRICITY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; STRESS RELAXATION;

PHOTOELECTRONIC PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035669410     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/4/307     Document Type: Conference Paper

References (11)