Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 10115-10118

  Saint Girons, G ^a   Sagnes, I ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ENERGY; INHOMOGENEOUS BROADENING; LOW ENERGIES; METAL-ORGANIC; NON-RADIATIVE; NONRADIATIVE DEFECTS; PHOTOLUMINESCENCE QUENCHING; PL INTENSITY; RATE EQUATIONS MODEL; THERMAL ESCAPE; TRANSFER MECHANISMS;

ACTIVATION ENERGY; CHARGE CARRIERS; EPITAXIAL GROWTH; LASER APPLICATIONS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR QUANTUM DOTS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037097869     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481968     Document Type: Article

References (19)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). apl APPLAB 0003-6951
2. M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. 22, 1915 (1986). ejq IEJQA7 0018-9197
3. K. Mukai, N. Ohtsuka, and M. Sugawara, Appl. Phys. Lett. 70, 2416 (1997). apl APPLAB 0003-6951
4. C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. N. Brunkhov, B. V. Volovik, S. G. Konnikov, A. R. Kovsh, and V. M. Ustinov, Appl. Phys. Lett. 76, 1573 (2001). apl APPLAB 0003-6951
5. J. Bloch, J. Shah, W. S. Hobson, J. Lopata, and S. N. G. Shu, Appl. Phys. Lett. 75, 2199 (1999). apl APPLAB 0003-6951
6. E. C. Le Ru, P. D. Siverns, and R. Murray, Appl. Phys. Lett. 77, 2446 (2000). apl APPLAB 0003-6951
7. C. Lobo, N. Perret, D. Morris, J. Zou, D. J. H. Cockayne, M. B. Johnston, M. Gal, and R. Leon, Phys. Rev. B 62, 2737 (2000). prb PRBMDO 0163-1829
8. A. E. Belyaev, S. T. Stoddart, P. M. Martin, P. C. Main, L. Eaves, and M. Henini, Appl. Phys. Lett. 76, 3570 (2000). apl APPLAB 0003-6951
9. C. Walther, J. Bollmann, H. Kissel, H. Kiamse, W. Neumann, and W. T. Masselink, Appl. Phys. Lett. 76, 2946 (2000). apl APPLAB 0003-6951
10. G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, Electron. Lett. 35, 1163 (1999). ell ELLEAK 0013-5194
11. S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, Semicond. Sci. Technol. 362, 778 (1996). sst SSTEET 0268-1242
12. A. Patanè, M. G. Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, M. Geddo, A. Bosacchi, and S. Franchi, Phys. Status Solidi A 164, 493 (1997). psa PSSABA 0031-8965
13. Y. C. Zhang, C. J. Huang, F. Q. Liu, B. Xu, J. Wu, Y. H. Chen, D. Dong, W. H. Jiang, X. L. Ye, and J. G. Wang, J. Appl. Phys. 90, 1973 (2001). jap JAPIAU 0021-8979
14. G. Saint-Girons, G. Patriarche, L. Largeau, J. Coelho, A. Mereuta, J. M. Moison, J. M. Gérard, and I. Sagnes, Appl. Phys. Lett. 79, 2157 (2001). apl APPLAB 0003-6951
15. G. Saint-Girons, G. Patriarche, A. Mereuta, and I. Sagnes, J. Appl. Phys. 91, 3859 (2002). jap JAPIAU 0021-8979
16. M. Vening, D. J. Dunstan, and K. P. Homewood, Phys. Rev. B 48, 2412 (1993). prb PRBMDO 0163-1829
17. S. Sauvage, PhD Thesis, University of Paris-Sud Orsay, France, 1998.
18. A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdré, R. P. Stanley, and M. Ilegems, Appl. Phys. Lett. 76, 3430 (2000). apl APPLAB 0003-6951
19. J. M. Gérard, in Confined Electrons and Photons: New Physics and Applications, Prospects of High - Efficiency Quantum Boxes Obtained by Direct Epitaxial Growth, (Plenum, New York, 1995), p. 347.