Improvement of crystalline quality of GaAsyP1-x-yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 443-448

  Momose, Kenji ^a   Yonezu, Hiroo ^a   Furukawa, Yuzo ^a   Utsumi, Atsushi ^a   Yoshizumi, Yusuke ^a   Shinohara, Sei ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTALLIZATION; HYDROGEN; IRRADIATION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC HYDROGEN IRRADIATION;

CRYSTAL GROWTH;

EID: 0037382733     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02367-9     Document Type: Conference Paper

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