Effects of slight misorientation of GaN templates on molecular-beam-epitaxy growth of ZnO

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1960-1963

  Kato, Hiroyuki ^a   Sano, Michihiro ^a   Miyamoto, Kazuhiro ^a   Yao, Takafumi ^b  

^a STANLEY ELECTRIC CO LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITON EMISSION; GAN TEMPLATE; GROWTH MECHANISMS; GROWTH MODE CHANGE; GROWTH MODES; IN-SITU; MATERIAL PROPERTY; MIS-ORIENTATION; MISORIENTATION ANGLE; PHOTOLUMINESCENCE INTENSITIES; SURFACE ATOMIC ARRANGEMENTS; SURFACE MIGRATION; TWO-DIMENSIONAL GROWTH; X RAY ROCKING CURVE; ZNO;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; THREE DIMENSIONAL; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 0037103579     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1493648     Document Type: Article

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