NiSi film synthesized by isochronal annealing in a magnetron sputtering system

Chinese Physics Letters

Volumn 23, Issue 3, 2006, Pages 678-681

  Yue, Shuang Lin ^a   Luo, Qiang ^a   Shi, Cheng Ying ^a   Yang, Hong Xin ^a   Wang, Qiang ^a   Xu, Peng ^a   Gu, Chang Zhi ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM THICKNESS; INTERFACES (MATERIALS); ION BEAMS; MAGNETRON SPUTTERING; NICKEL COMPOUNDS; SILICON COMPOUNDS;

FILM-THICKNESS; INTERFACE ROUGHNESS; ISOCHRONAL ANNEALING; MAGNETRON SPUTTERING SYSTEMS; NISI FILMS; PRECLEANING; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; SI (100) SUBSTRATE; SPUTTERING CHAMBER; SYNTHESISED;

OXYGEN;

EID: 33644588593     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/3/043     Document Type: Article

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