Analytical studies of nickel suicide formation through a thin Ti layer

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 218-222

  Fenske, F ^a   Schopke A ^a   Schulze, S ^b   Selle, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTERFACIAL ENERGY; NICKEL COMPOUNDS; SILICATES; TITANIUM COMPOUNDS;

SILICIDES;

SEMICONDUCTING SILICON;

EID: 0030234597     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00147-X     Document Type: Article

References (26)

1. S.P. Murarka, Metallization: Theory and Practice for VLSI and ULSI, 1st ed. (Butterworth-Heinemann, Boston, MA, 1993).
2. K.N. Tu, Thin Solid Films 140 (1986) 71.
3. L.J. Chen, W. Lur and J.Y. Cheng, Thin Solid Films 191 (1990) 221.
4. F. Fenske et al., Patent DD 277 602 (21 December 1987).
5. M.L.A. Dass, D.B. Fraser and C.-S. Wei, Appl. Phys. Lett. 58 (1991) 1308.
6. B.-H. Tseng, C.-K. Lee and M.-F. Tseng, Mater. Res. Soc. Symp. Proc. 260 (1992) 685.
7. S. Ogawa, J.A. Fair, M.L.A. Dass, E.C. Jones, T. Konzaki, N.W. Cheung and D.B. Fraser, in: Ext. Abstr. 1993 Int. Conf. Solid State Devices, p. 195.
8. A. Lauwers, A. Vercaemst, M. Van Hove, K. Kyllesbech Larsen, R. Verbeeck, R. Van Meirhaeghe, K. Maex and M. Van Rossum, Mater. Res. Soc. Symp. Proc. 320 (1994) 59.
9. J.-H. Lee, G.A. Rozgonyi, B.K. Patnaik, D. Knoesen, D. Adams, P. Balducci and A.S. Salih, J. Appl. Phys. 73 (1993) 4023.
10. K.N. Tu, W.N. Hammer and J.O. Olowolafe, J. Appl. Phys. 51 (1980) 1663.
11. F. Fenske, S. Schulze, B. Selle, H. Lange and W. Wolke, Mater. Res. Soc. Symp. Proc. 320 (1994) 427.
12. S. Gaarenstrom, Appl. Surf. Sci. 7 (1881) 1.
13. S. Kelling, Diploma Work, Technical University Berlin, June 1995.
14. R. Sinclair, K. Holloway, K.B. Kim, D.H. Ko, A.S. Bhansali, A.F. Schwartzman and S. Ogawa, Inst. Phys. Conf. Ser. No. 100, Sect. 8 (1989) 599.
15. B.M. Clemens and R. Sinclair, MRS Bull. (1990) 19.
16. L.J. Chen, W.Y. Hsieh, J.H. Lin, T.L. Lee, J.F. Chen, J.M. Liang and M.H. Wang, Mater. Res. Soc. Symp. Proc. 320 (1994) 343.
17. I. Kondo, T. Yoneyama, K. Kondo, O. Takenaka and A. Kinbara, J. Vac. Sci. Technol. A 10 (1992) 3166.
18. R.W. Béne, J. Appl. Phys. 61 (1987) 1826.
19. M.A. Nicolet and S.S. Lau, in: VLSI Electronics, Eds. N.G. Einspuch and G.B. Larrabee, Vol. 6 (Academic Press, New York, 1983) p. 453.
20. C. Calandra, O. Bisi and G. Ottaviani, Surf. Sci. Rep. 4 (1985) 271.
21. L.S. Hung, S.Q. Wang, J.W. Mayer and F.W. Saris, Mater. Res. Soc. Symp. Proc. 54 (1986) 161.
22. M. Setton, J. van der Spiegel, J.J. Santiago and C.S. Wei, Vide Couches Minces 42 (1987) 145.
23. D. Hesse, P. Werner, J. Heydenreich and R. Mattheis, Mater. Res. Soc. Proc. 320 (1994) 221.
24. G. Ottaviani, Thin Solid Films 140 (1986) 3.
25. W.Y. Hsieh, J.H. Lin, M.H. Wang and L.J. Chen, Mater. Res. Soc. Symp. Proc. 311 (1993) 323.
26. L.S. Hung and J.W. Mayer, Thin Solid Films 109 (1983) 85.