Modification of GaAs(1 0 0) surfaces upon adsorption of perylene derivatives

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 178-184

  Salvan, G ^a   Silaghi, S ^a   Paez, B ^a   Kampen, T U ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

DiMe PTCDI; GaAs(1 0 0); PTCDA; Raman spectroscopy; Surface passivation

Indexed keywords

ADSORPTION; ANNEALING; AROMATIC COMPOUNDS; CRYSTAL DEFECTS; DERIVATIVES; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; PASSIVATION; PHONONS; RAMAN SPECTROSCOPY; RESONANCE; SUBSTRATES; SURFACE TREATMENT;

BAND ALIGNMENT; INTERLAYERS; SURFACE PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3342971293     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.058     Document Type: Conference Paper

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