Optical characterization of PTCDA films grown on passivated semiconductor substrates

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 387-391

  Kampen, T U ^a   Salvan, G ^c   Friedrich, M ^a   Tenne, D A ^b   Park, S ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c BABE BOLYAI UNIVERSITY   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

IN SITU PROCESSING; INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR VIBRATIONS; PASSIVATION; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

ORGANIC MOLECULAR BEAM DEPOSITION (OMBD); PERYLENETETRACARBOXYLIC DIANHYDRIDE;

SEMICONDUCTING FILMS;

EID: 0034299258     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00454-2     Document Type: Article

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