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Applied Surface Science

Volumn 179, Issue 1-4, 2001, Pages 113-117

Raman spectroscopy: A powerful tool for characterisation of Ag/3,4,9,10 -perylene-tetracarboxylic-dianhydride/GaAs heterostructures

(7) Salvan, G a Tenne, D A a,b Kampen, T U a Scholz, R a Jungnickel, G c Frauenheim, Th c Zahn, D R T a

a CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

c UNIVERSITY OF PADERBORN (Germany)

Author keywords

Ag; GaAs; PTCDA; Raman spectroscopy; SERS

Indexed keywords

DEPOSITION; HETEROJUNCTIONS; MOLECULAR BEAMS; MOLECULAR VIBRATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILVER; SUBSTRATES;

ORGANIC MOLECULAR BEAM DEPOSITION;

RAMAN SPECTROSCOPY;

EID: 0035898872 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00272-0 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.