Interface formation of PTCDA on Se-modified GaAs(100) surfaces

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 376-379

  Park, S ^a   Querner, T ^a   Kampen, T U ^a   Braun, W ^b   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DESORPTION; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SELENIUM; SEMICONDUCTOR GROWTH; SYNCHROTRON RADIATION; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

PERYLENETETRACARBOXYLIC DIANHYDRIDE; SOFT X RAY PHOTOEMISSION SPECTROSCOPY (SXPS);

SEMICONDUCTOR JUNCTIONS;

EID: 0034301161     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00452-9     Document Type: Article

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