Organic-inorganic interfaces: Principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 405-411

  Kendrick, C ^a,b   Kahn, A ^a  

^a Princeton University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Point on line coincidence; PTCDA; Quasi epitaxy; STM

Indexed keywords

EPITAXIAL GROWTH; GRAPHITE; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS;

PERYLENETETRACARBOXYLIC DIANHYDRIDE; POINT ON LINE COINCIDENCE;

INTERFACES (MATERIALS);

EID: 0031703254     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00468-6     Document Type: Article

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