DLTS study of silicon-on-insulator structures irradiated with electrons or high-energy ions

IEEE Transactions on Nuclear Science

Volumn 51, Issue 3 IV, 2004, Pages 1257-1261

  Antonova, I V ^a   Stano, J ^a   Naumova, O V ^a   Skuratov, V A ^a   Popov, V P ^a  

^a ENERGY SYSTEMS INSTITUTE   (Russian Federation)

Author keywords

Electron irradiation; High energy ion irradiation; Interface traps; Radiation defects; Silicon on insulator (soi)

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY TRANSFER; HIGH ENERGY PHYSICS; INTERFACES (MATERIALS); ION BOMBARDMENT; KRYPTON; RADIATION DAMAGE; SILICON ON INSULATOR TECHNOLOGY;

HIGH ENERGY ION IRRADIATION; INTERFACE TRAPS; RADIATION DEFECTS;

ELECTRON IRRADIATION;

EID: 3342944336     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.829367     Document Type: Article

References (24)

1. S. Krause, M. Anc, and P. Roitman, "Evolution and future trends of SIMOX materials," in MRS Bull., vol. 12, Dec. 1998, pp. 25-29.
2. C. A. Desmon-Colinge and U. Gosele, "Wafer bonding and thinning technologies," in MRS Bull., vol. 12, Dec. 1998, pp. 30-33.
3. M. Bruel, "Application of hydrogen ion beams to silicon on insulator material technology," in Nucl. Instrum. Methods NIM B, vol. 108, Feb. 1996, pp. 313-319.
4. V. P. Popov, I. V. Antonova, V. F. Stas, L. V. Mironova, E. P. Neustroev, A. K. Gutakovskii, A. A. Franzusov, and G. N. Feofanov et al., "Structural and electrical properties of silicon on insulator structures manufactured on Fz- and Cz-silicon by smart-cut technology," in Perspectives, Science, and Technologies for Novel Silicon on Insulator Devices, P. L. F. Hemment et al., Eds. Dordrecht. The Netherlands: Kluwer, 2000, pp. 47-54.
5. P. Mangiagalli, M. Levalois, and P. Marie, "A comparative study of induced damage after irradiation with swift heavy ions, neutrons and electrons in low doped silicon." Nucl. Instrum. Methods B, vol. 146, pp. 317-322, Jan. 1992.
6. M. W. Thompson, "Relativistic collosion, fast electrons," in Defects and Radiation Damage in Metals. Cambridge. U.K.: Cambridge Univ. Press, 1969, pp. 123-126.
7. A. M. Parshin, I. M. Nekludov, and N. V. Kamyshenko, Eds., "Collision events in silicon." in Physics of Radiation Phenomena in Materials. Moscow, Russia: Nauka, 1998, pp. 22-27.
8. I.V.Antonova, O. V.Naumova, V.P.Popov, J. Stano, and V. A. Skuratov, "Modification of the bonded interface in silicon-on-insulator structures under thermal treatment in hydrogen ambient," J. Appl. Phys., vol. 93, pp. 426-431, Jan. 2003.
9. K. Hofmann and M. Schulz. "Process-induced interface and bulk states in MOS structures," J. Electrochem. Soc., vol. 132, pp. 2201-2207, 1985.
10. J. Stano, V. A. Skuratov, and M. Ziska, "Radiation damage in MOS stctures, irradiated with high-energy heavy ions and fast neutrons, with regard of charge DLTS and CV-Measurements," Solid State Phenomena, vol. 82-84, pp. 453-457, 2002.
11. 2 interface states," Surf. Sci., vol. 162, pp. 680-686, Mar. 1985.
12. B. G. Svensson, C. Jagadish, A. Hellen, and J. Lalita, "Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon," Phys. Rev. B., vol. 55, pp. 10498-10507, Aug. 1997.
13. R. K. Lawrence, D. E. loannou, W. C. Jenkins, and S. T. Liu, "Gate-diode characterization of the back-channel interface on irradiated SOI wafer," IEEE Trans. Nucl. Sci., vol. 48, pp. 2140-2145, Dec. 2001.
14. R. L. Fleischer, P. B. Price, and R. M. Walker, Nuclear Tracks in Solids: Principles and Applications. Berkeley, CA: Univ. California Press, 1975.
15. P. I. gaiduk, A. N. Larsen, J. L. Hansen, C. Trautmann, and M. Toulemonde, "Discontinuous tracks in relaxed SiGe alloy layers: A velocity effect," Appl. Phys. Lett., vol. 83, pp. 1746-1748, Sept. 2003.
16. B. Canut, N. Bonardi, S. M. Ramos, and S. Della-Negra, "Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime," Nucl. Instrum. Methods B., vol. 146, pp. 296-301, Dec. 1998.
17. B. G. Svensson, C. Jagadish, A. Hallen, and J. Lalita, "Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon." Phys. Rev. B, vol. 55, pp. 10498-10507. Apr. 1997.
18. V. Privitera, S. Coffa, F. Priolo, K. K. Larsen, S. Libertino, and A. Camera, "Room temperature migration of ion beam injected point defects in crystalline silicon," Nucl. Instrum. Methods B, vol. 120, pp. 9-13, Jan. 1996.
19. K. L. Wang, Y. H. Lee, and J. W. Corbett, "Defect distribution near the surface of electron-irradiated silicon," Appl. Phys. Lett., vol. 33, pp. 547-548, Sept. 1978.
20. I. V. Antonova, V. P. Popov, V. F. Stas, A. K. Gutakovskii, A. E. Plotnikov, and V. I. Obodnikov, "Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology," Microelectron. Eng., vol. 48, pp. 383-386, 1999.
21. I. V. Antonova, E. P. Neustroev, A. Misiuk, and V. A. Skuratov, "Formation of shallow donors in stress-annealed silicon implanted with high-energy ions," Solid State Phenomena, vol. 82-84, pp. 243-248, 2002.
22. A. N. Nasarov, V. S. Lysenko, J. P. Collange. and D. Flandre, "Nature of high-temperature charge instability of fully depleted SOI MOSFETs," in Electrochemical Society Proceedings PV 2003-05, Silicon-on-Insulator Technology and Devices XI, S. Cristoloveanu. Ed. Pennington, NJ: ECS, 2003, pp. 455-461.
23. 2-on Si structures," J. Appl. Phys., vol. 58, pp. 2524-2533. Oct. 1985.
24. I. V. Antonova, D. V. Nikolaev, O. V. Naumova, S. A. Smagulova, and V. P. Popov, "Changes in the parameters of the silicon-on-insulator structures under irradiation," in Electrochemical Society Proceedings PV 2003-05, Silicon-on-lnsulator Technology and Devices XI, S. Cristoloveanu, Ed. Pennington, NJ: ECS, 2003, pp. 505-510.