Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 383-386

  Antonova, I V ^a   Popov, V P ^a   Stas, V F ^a   Gutakovskii, A K ^a   Plotnikov, A E ^a   Obodnikov, V I ^a  

^a I Semiconduct Phys Lavrentieva 13 ^*  (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SOAKING PITS;

HYDROGEN DEFECT COMPLEXES; SMART CUT TECHNOLOGY;

MICROELECTRONICS;

EID: 0033190155     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00411-6     Document Type: Article

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