Lattice distortion due to surface treatment of bias sputtering revealed by extremely asymmetric X-ray diffraction

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 409-414

  Yoshida, Y ^a   Akimoto, K ^a   Emoto, T ^b   Kikuchi, S ^c   Itagaki, K ^c   Namita, H ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b TOYOTA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

Ar plasma ion irradiation; Lattice distortion; Semiconductors

Indexed keywords

CRYSTAL LATTICES; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; IRRADIATION; LIGHT REFLECTION; MIRRORS; OXIDES; SPUTTERING; STRAIN; SURFACE CLEANING; SYNCHROTRONS; X RAY DIFFRACTION;

AR PLASMA ION IRRADIATONS; BIAS SPUTTERING; BIAS VOLTAGE; LATTICE DISTORTIONS;

CRYSTAL DEFECTS;

EID: 3342919204     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.059     Document Type: Conference Paper

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