Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 83-87

  Emoto, T ^a   Yoshida, Y ^b   Akimoto, K ^b   Ichimiya, A ^b   Kikuchi, S ^c   Itagaki, K ^c   Namita, H ^d  

^a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

^d CACs Inc   (Japan)

Author keywords

III V semiconductor; Oxide semiconductor interface; Sputtering; Strain; Synchrotron radiation analysis

Indexed keywords

CLEANING; COMPOSITION; CRYSTAL LATTICES; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); SPUTTERING; SYNCHROTRON RADIATION;

LATTICE DISTORTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0038345995     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00480-X     Document Type: Conference Paper

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