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Volumn 190, Issue 1-4, 2002, Pages 467-474
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The passivation of atomic scale defects present on III-V semiconductor laser facets: An STM/STS investigation
a
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Author keywords
Defects; GaAs; Laser; Passivation; STM; STS
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Indexed keywords
ADSORPTION;
DEFECTS;
INTERFACES (MATERIALS);
LASER APPLICATIONS;
NANOTECHNOLOGY;
PASSIVATION;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SUBSTRATES;
SURFACE PROPERTIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC SCALE DEFECTS;
SEMICONDUCTOR LASERS;
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EID: 0037042108
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(01)00920-5 Document Type: Article |
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Times cited : (7)
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References (12)
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