Total dose radiation response of CMOS compatible SOI MESFETs

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2398-2402

  Spann, John ^b   Kushner, Vadim ^b   Thornton, Trevor J ^a,b   Yang, Jinman ^b   Balijepalli, Asha ^b   Barnaby, Hugh J ^b   Chen, Xiao Jie ^b   Alexander, David ^c   Kemp, William T ^c   Sampson, Steve J ^c   Wood, Michael E ^d  

^a IEEE   (United States)

^b Arizona State University   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d Naval Command   (United States)

Author keywords

MESFETs; Silicon on insulator technology; X ray effects

Indexed keywords

BACK MOS GATE SHIFT; DRAIN CURRENT; SCHOTTKY GATE; TISI 2;

DOSIMETRY; MESFET DEVICES; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; X RAYS;

CMOS INTEGRATED CIRCUITS;

EID: 33144480697     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860701     Document Type: Conference Paper

References (13)

1. J. Yang, V. Kushner, A. Balijepalli, T. J. Thornton, J. Vandersand, B. J. Blalock, and M. E. Wood, "Integrated SOI MOSFET's and MESFETs," J. High Speed Electron., to be published.
2. K. P. Mac Williams and J. D. Plummer, "Device physics and technology of complementary silicon MESFET's for VLSI applications," IEEE Trans. Election Devices, vol. 38, no. 12, pp. 2619-2631, Dec. 1991.
3. U. Magnusson, J. Tiren, H. Norde, and H. Bleichner, "Subthreshold behavior of silicon MESFET's on SOS and bulk silicon substrates," Solid State Electron., vol. 32, pp. 931-934, 1989.
4. D. P. Vu and A. Sonos, "Self-aligned Si MESFET's fabricated in thin silicon-on-insulator films," Electron. Lett., vol. 23, pp. 354-355, 1987.
5. H. Vogt, G. Burbach, J. Belz, and G. Zimmer, "MESFET's in thin silicon on SIMOX," Electron. Lett., vol. 25, pp. 1580-1581, 1989.
6. J. Yang, J. Spann, R. Anderson, and T. Thornton, "High-frequency performance of subthreshold SOI MESFETs," IEEE Electron Device Lett., vol. 25, no. 9, pp. 652-654, Sep. 2004.
7. Atlas. Silvaco Corp., Santa Clara, CA. [Online]. Available: http://www.silvaco.com
8. A. M. Pavanello and J. A. Martino, "Extraction of the oxide charges at the silicon substrate interface in SOI MOSFETs," Solid State Electron., vol. 43, pp. 2039-2046, 1999.
9. R. K. Lawrence, "Radiation effects in SOI isolation oxides," in Proc. 2001 IEEE Int. Semiconductor Device Research Symp., Washington, DC, pp. 461-464.
10. J. R. Schwank, V. Ferlet-Cavrois, M. R. Shaneyfelt, P. Paillet, and P. E. Dodd, "Radiation effects in SOI technologies," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 522-538, Jun. 2003.
11. S. T. Liu, W. C. Jenkins, and H. L. Hughes, "Total dose radiation hard 0.35 μm SOI CMOS technology," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2442-2449, Dec. 1998.
12. Y. Li, G. Nu, J. D. Cressler, J. Patel, S. T. Liu, R. A. Reed, M. M. Mojarradi, and B. J. Blalock, "The operation of 0.35 micron partially depleted SOI CMOS technology in extreme environments," Solid State Electron., vol. 47, pp. 1111-1115, 2003.
13. J. B. McKitterick, A. Caviglia, and W. P. Maszara, "Total dose hardness of bonded SOI wafers," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 2098-2102, Dec. 1992.