Radiation effects in SOI isolation oxides

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 461-464

  Lawrence, R K ^a  

^a SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDES; CHARGE TRAPPING EFFECT; DEVICE DESIGN; ISOLATION OXIDES; RADIATION SENSITIVITY; SOI TECHNOLOGY; TOTAL DOSE RADIATION EFFECTS;

RADIATION EFFECTS;

EID: 84900817057     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984545     Document Type: Conference Paper

References (9)

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2. R.K. Lawrence, D.E. Ioannou, H.L. Hughes, P.J. McMarr and B.J. Mrstik, IEEE Trans. Nuc. Sci., 42, p.2114, 1995.
3. M.R. Shaneyfelt, P.E. Dodd, B.L. Draper, and R.S. Flores, IEEE Trans. Nuc. Sci., 45, p.2584, 1998.
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5. B.J. Mrstik, H.L. Hughes, R.K. Lawrence, P.J. McMarr and P. Gouker, presented at IEEE NSREC 2001 conference, July 16-20, 2001, Vancouver, BC Canada.
6. R.K. Lawrence, B.J. Mrstik, H.L. Hughes, and P.J. McMarr, IEEE Trans. Nuc. Sci., 44, p.2095, 1997.
7. R. K. Lawrence, B.J. Mrstik, H.L. Hughes, and P.J. McMarr, IEEE Trans. Nuc. Sci., 43, p.2639, 1996.
8. P.V. Dressendorfer, "Radiation-Hardening Technology," in Ionizing Radiation Effects in MOS Devices & Circuits. T.P. Ma and P.V. Dressendorfer, Eds., John Wiley & Sons, NY, Chap.6, p.387, 1989.
9. S.T Liu, W.C. Jenkins, R.K. Lawrence, M. Flanery and A. Hurst, presented at IEEE NSREC 2001 conference, July 16-20, 2001, Vancouver, BC Canada.