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Volumn 25, Issue 9, 2004, Pages 652-654

High-frequency performance of subthreshold SOI MESFETs

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; MIXER CIRCUITS; SCHOTTKY BARRIER DIODES; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

EID: 4444331201     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.834245     Document Type: Article
Times cited : (22)

References (13)
  • 10
    • 0016510203 scopus 로고
    • Carrier-density fluctuations and igfet mobility near threshold
    • J. R. Brews, "Carrier-density fluctuations and igfet mobility near threshold," J. Appl. Phys., vol. 46, pp. 2193-2203, 1975.
    • (1975) J. Appl. Phys. , vol.46 , pp. 2193-2203
    • Brews, J.R.1
  • 11
    • 0016028465 scopus 로고
    • Carrier mobilities at weakly inverted silicon surfaces
    • J. T. C. Chen and R. S. Muller, "Carrier mobilities at weakly inverted silicon surfaces," J. Appl. Phys., vol. 45, pp. 828-834, 1974.
    • (1974) J. Appl. Phys. , vol.45 , pp. 828-834
    • Chen, J.T.C.1    Muller, R.S.2
  • 13
    • 0035471662 scopus 로고    scopus 로고
    • Physics and applications of the Schottky junction transistor Thornton T.J
    • Dec
    • T. J. Thornton, "Physics and applications of the Schottky junction transistor," IEEE Trans. Electron Devices, vol. 48, pp. 2421-2427, Dec. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 2421-2427


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.