Extraction of the oxide charges at the silicon substrate interface in Silicon-On-Insulator MOSFET's

Solid-State Electronics

Volumn 43, Issue 11, 1999, Pages 2039-2046

  Pavanello, Marcelo Antonio ^a   Martino, João Antonio ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; INTERFACES (MATERIALS); LOW TEMPERATURE PHENOMENA; OXIDES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CHARGE DENSITY EXTRACTION; OXIDE CHARGES; SILICON SUBSTRATES;

MOSFET DEVICES;

EID: 0033226155     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00178-1     Document Type: Article

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