메뉴 건너뛰기




Volumn 52, Issue 6, 2005, Pages 2542-2549

Accurate SPICE models for CMOS analog radiation-hardness-by-design

Author keywords

Analog integrated circuits; Field effect transistor (FET) integrated circuits; Radiation hardening; Semiconductor device modeling

Indexed keywords

ANALOG INTEGRATED CIRCUITS; FIELD-EFFECT TRANSISTOR (FET) INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MODELING; SPICE MODELS;

EID: 33144475055     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860717     Document Type: Conference Paper
Times cited : (22)

References (16)
  • 1
    • 0034450465 scopus 로고    scopus 로고
    • Application of hardness-by-design methodology to radiation-tolerant ASIC technologies
    • Dec.
    • R. C. Lacoe, J. V. Osborn, R. Koga, S. Brown, and D. C. Mayer, "Application of hardness-by-design methodology to radiation-tolerant ASIC technologies," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2334-2341, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , Issue.6 , pp. 2334-2341
    • Lacoe, R.C.1    Osborn, J.V.2    Koga, R.3    Brown, S.4    Mayer, D.C.5
  • 2
    • 0033311541 scopus 로고    scopus 로고
    • Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: Practical design aspects
    • Dec.
    • G. Anelli et al., "Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: Practical design aspects," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1690-1696, Dec. 1999.
    • (1999) IEEE Trans. Nucl. Sci. , vol.46 , Issue.6 , pp. 1690-1696
    • Anelli, G.1
  • 5
    • 0030104113 scopus 로고    scopus 로고
    • A comparison of fault-tolerant state machine architectures for space-borne electronics
    • Mar.
    • S. Niranjan and J. F. Frenzel, "A comparison of fault-tolerant state machine architectures for space-borne electronics," IEEE Trans. Reliab., vol. 45, no. 1, pp. 109-113, Mar. 1996.
    • (1996) IEEE Trans. Reliab. , vol.45 , Issue.1 , pp. 109-113
    • Niranjan, S.1    Frenzel, J.F.2
  • 6
    • 0030375853 scopus 로고    scopus 로고
    • Upset hardened memory design for submicron CMOS technology
    • Dec.
    • T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron CMOS technology," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2874-2878, Dec. 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , Issue.6 , pp. 2874-2878
    • Calin, T.1    Nicolaidis, M.2    Velazco, R.3
  • 8
    • 33144461250 scopus 로고    scopus 로고
    • Analog rad-hard by design issues
    • Coeur d'Alene, ID, May 28-29
    • M. N. Martin and K. Strohbehn, "Analog rad-hard by design issues," presented at the NASA Symp. VLSI Design, Coeur d'Alene, ID, May 28-29, 2003.
    • (2003) NASA Symp. VLSI Design
    • Martin, M.N.1    Strohbehn, K.2
  • 9
    • 0033745487 scopus 로고    scopus 로고
    • Aspect ratio calculation in n-channel MOSFET's with a gate-enclosed layout
    • Jun.
    • A. Giraldo, A. Paccagnella, and A. Minzoni, "Aspect ratio calculation in n-channel MOSFET's with a gate-enclosed layout," Solid-State Electron., vol. 44, pp. 981-989, Jun. 2000.
    • (2000) Solid-State Electron. , vol.44 , pp. 981-989
    • Giraldo, A.1    Paccagnella, A.2    Minzoni, A.3
  • 11
    • 0020173624 scopus 로고
    • Modeling of MOS transistors with non-rectangular-gate geometries
    • Aug.
    • P. Grignoux and R. L. Geiger, "Modeling of MOS transistors with non-rectangular-gate geometries," IEEE Trans. Electron Devices, vol. 29, no. 8, pp. 1261-1269, Aug. 1982.
    • (1982) IEEE Trans. Electron Devices , vol.29 , Issue.8 , pp. 1261-1269
    • Grignoux, P.1    Geiger, R.L.2
  • 15
    • 33144477491 scopus 로고    scopus 로고
    • Dept. Electrical Engineering and Computer Science, Univ. of California, Berkeley, CA
    • BSIM3 Version 3.2 Manual, 1998. Dept. Electrical Engineering and Computer Science, Univ. of California, Berkeley, CA.
    • (1998) BSIM3 Version 3.2 Manual


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.