Upgrading of CdZnTe by annealing with pure Cd and Zn metals

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 392-396

  Li, Guoqiang ^a   Zhang, Xiaolu ^b   Hua, Hui ^c   Jie, Wanqi ^b,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^c NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PARTIAL PRESSURE; ZINC;

CDZNTE CRYSTAL; PARTIAL PRESSURE ANNEALING; TEMPERATURE DEPENDENCE;

CADMIUM COMPOUNDS;

EID: 32944476149     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/032     Document Type: Article

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