Annealing of Cd1-xZnxTe in CdZn vapors

Journal of Electronic Materials

Volumn 31, Issue 8, 2002, Pages 834-840

  Yujie, Li ^a   Guoli, Ma ^b   Xiaona, Zhan ^a   Wanqi, Jie ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b Physics Department of Yantai University   (Taiwan)

Author keywords

Annealing; CdZnTe; Crystallization quality; Diffusion coefficient; IR permeability; Zn partial pressure

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; CRYSTALS; DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED TRANSMISSION; SCANNING ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION ANALYSIS;

BULK CRYSTALS; CADMIUM ZINC; CADMIUM ZINC TELLURIUM; CONCENTRATION PROFILE; INFRARED PERMEABILITY; X RAY ROCKING CURVES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0036687969     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0192-6     Document Type: Article

References (10)