Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 457-460

  Li, Guoqiang ^a   Jie, Wanqi ^a   Wang, Tao ^a   Gu, Zhi ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGMAN METHOD; CADMIUM ZINC TELLURIDE; CONDUCTION BAND;

BAND STRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; GAMMA RAYS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INDIUM ALLOYS; INGOTS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; X RAY ANALYSIS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 1642265748     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/029     Document Type: Article

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