Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers

Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 204-209

  Li, Biao ^a   Zhu, Jiqian ^a   Zhang, Xiaoping ^a   Chu, Junhao ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Annealing; CdZnTe; Stoichiometry

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; INFRARED TRANSMISSION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

THERMOMIGRATION PROCESS; X RAY DOUBLE CRYSTAL ROCKING CURVE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031271931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00226-1     Document Type: Article

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