Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 332-337

  Li, Guoqiang ^a   Jie, Wanqi ^a   Gu, Zhi ^a   Hua, Hui ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

A1. Characterization; A1. Segregation; A2. Bridgman technique; B2. Semiconducting II VI materials

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INFRARED TRANSMISSION; LEAKAGE CURRENTS; MELTING; OHMIC CONTACTS; PHOTOSENSITIVITY; PRECIPITATION (CHEMICAL); SEMICONDUCTING CADMIUM COMPOUNDS;

BRIDGEMAN TECHNIQUE; CHARACTERIZATION METHODS; SEGREGATION; SEMICONDUCTING II-VI MATERIALS;

CRYSTAL GROWTH;

EID: 1342304973     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.069     Document Type: Article

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