Nitrogen-activated bowing of dilute In yGa 1-yAs 1-xN x based on photoreflectance studies

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7576-7580

  Fahmi, M M E ^a   Khan, Arif ^a   Griffin, J A ^a   Harris, G L ^a   Robins, Lawrence H ^b   Birdwell, A G ^b   Kang, Youn Seon ^b   Smith, David J ^c   Steiner, Todd ^d   Mohammad, S Noor ^e  

^a Mat Sci Res Center of Excellence   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; PHOTOREFLECTANCE SPECTROSCOPY;

COMPOSITION; CRYSTAL IMPURITIES; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

INDIUM ALLOYS;

EID: 0346935207     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630191     Document Type: Article

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