Formation of InAs wires and dots on vicinal GaAs (110) surfaces with giant steps by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 12 B, 1997, Pages

  Torii, Satoshi ^a   Shim, Byoung Rho ^a   Yasuda, Haruyuki ^a   Maehashi, Kenzo ^a   Hasegawa, Shigehiko ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ARSENIDE; INDIUM ARSENIDE; SOLID SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031375467     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1645     Document Type: Article

References (10)