High electron mobility in well ordered and lattice-strained hydrogenated nanocrystalline silicon

Nanotechnology

Volumn 17, Issue 2, 2006, Pages 595-599

  Chen, X Y ^a   Shen, W Z ^a   Chen, H ^a   Zhang, R ^a   He, Y L ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; PHONONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

HYDROGENATED NANOCRYSTALLINE SILICON; MASS SCATTERING; RADIO-FREQUENCY POWER; SI-SI NETWORKS;

ELECTRON MOBILITY;

EID: 32644432656     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/17/2/042     Document Type: Article

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