Enhancement of electron mobility in nanocrystalline siliconcrystalline silicon heterostructures

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Chen, X Y ^a   Shen, W Z ^a   He, Y L ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN THEORY; GLASS SUBSTRATES; INTERFACIAL CHARGES; MOBILITY SPECTRUM ANALYSIS (MSA);

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; GRAIN BOUNDARIES; HALL EFFECT; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETIC FIELDS; NANOSTRUCTURED MATERIALS; POLYSILICON; RAMAN SCATTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON MOBILITY;

EID: 19944434358     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1832752     Document Type: Article

References (27)

1. Y. T. Tan, T. Kamiya, Z. A. K. Durrani, and H. Ahmed, J. Appl. Phys. 94, 633 (2003).
2. M. W. M. van Cleef, R. E. I. Schropp, and F. A. Rubinelli, Appl. Phys. Lett. 73, 2609 (1998).
3. I. C. Cheng and S. Wagner, Appl. Phys. Lett. 80, 440 (2002).
4. Y. L. He, G. Y. Hu, M. B. Yu, M. Liu, J. L. Wang, and G. Y. Xu, Phys. Rev. B 59, 15352 (1999).
5. R. A. Street, Phys. Rev. Lett. 49, 1187 (1982).
6. C. Das, A. Dasgupta, S. C. Saha, and S. Ray, J. Appl. Phys. 91, 9401 (2002).
7. S. C. Saha, A. K. Barua, and S. Ray, J. Appl. Phys. 74, 5561 (1993).
8. S. C. Saha and S. Ray, J. Appl. Phys. 78, 5713 (1995).
9. Y. Nasuno, M. Kondo, and A. Matsuda, Appl. Phys. Lett. 78, 2330 (2001).
10. G. Y. Xu and T. M. Wang, Semicond. Sci. Technol. 15, 613 (2000).
11. W. A. Beck and J. R. Anderson, J. Appl. Phys. 62, 541 (1987).
12. J. Antoszewski, D. J. Seymour, L. Faraone, J. R. Meyer, and C. A. Hoffman, J. Electron. Mater. 24, 1255 (1995).
13. J. R. Meyer, C. A. Hoffman, J. Antoszewski, and L. Faraone, J. Appl. Phys. 81, 709 (1997).
14. M. K. Hudait and S. B. Krupanidhi, J. Vac. Sci. Technol. B 17, 1003 (1999).
15. Y. T. Tan, T. Kamiya, Z. A. K. Durrani, and H. Ahmed, Appl. Phys. Lett. 78, 1083 (2001).
16. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985).
17. U. Sivan, O. Entin-Wohlman, and Y. Imry, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.60.1566 60, 1566 (1988); O. Entin-Wohlman, Y. Imry, and U. Sivan, Phys. Rev. B 40, 8342 (1989).
18. U. Sivan, O. Entin-Wohlman, and Y. Imry, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.60.1566 60, 1566 (1988); O. Entin-Wohlman, Y. Imry, and U. Sivan, Phys. Rev. B 40, 8342 (1989).
19. S. Manzini and A. Modelli, J. Appl. Phys. 65, 2361 (1989).
20. S.-R. E. Yang, and S. Das Sarma, Phys. Rev. B 0163-1829 10.1103/PhysRevB.37.10090 37, 10090 (1988); H. A. Fertig and S. Das Sarma, Phys. Rev. B 42, 1448 (1990).
21. S.-R. E. Yang, and S. Das Sarma, Phys. Rev. B 0163-1829 10.1103/PhysRevB.37.10090 37, 10090 (1988); H. A. Fertig and S. Das Sarma, Phys. Rev. B 42, 1448 (1990).
22. H. T. Grahn, K. von Klitzing, K. Ploog, and G. H. Döhler, Phys. Rev. B 43, 12094 (1991).
23. T. Kamiya, K. Nakahata, Y. T. Tan, Z. A. K. Durrani, and I. Shimizu, J. Appl. Phys. 89, 6265 (2001).
24. X. Y. Chen and W. Z. Shen, Appl. Phys. Lett. 85, 287 (2004).
25. M. Borgstrom, T. Bryllert, T. Sass, B. Gustafson, L.-E. Wernersson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. 78, 3232 (2001).
26. H. Ohno, J. K. Luo, K. Matsuzaki, and H. Hasegawa, Appl. Phys. Lett. 54, 36 (1989).
27. T. Weis, R. Lipperheide, U. Wille, and S. Brehme, J. Appl. Phys. 92, 1411 (2002).