Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

Surface Science

Volumn 600, Issue 4, 2006, Pages 815-819

  Shirasawa, Tetsuroh ^a   Mizuno, Seigi ^a   Tochihara, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Ge(0 0 1); Low energy electron diffraction (LEED); Morphology; Roughness; Si(0 0 1); Surface structure; Topology

Indexed keywords

GERMANIUM; LOW ENERGY ELECTRON DIFFRACTION; SILICON;

GE(0 0 1); INCIDENT ENERGY; SI(0 0 1);

SURFACE ROUGHNESS;

EID: 32444436613     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.11.031     Document Type: Article

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