New experimental observations of single electron trapping properties of Si nanoclusters in SRO obtained by LPCVD

Materials Science in Semiconductor Processing

Volumn 7, Issue 1-2, 2004, Pages 45-50

  Yu, Zhenrui ^a   Aceves, Mariano ^a   Carrillo, Jesus ^b  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

C V measurements; I V measurements; One electron trapping; Si nanoclusters; Silicon rich oxide (SRO)

Indexed keywords

ION IMPLANTATION; LIGHT EMITTING DIODES; MOS DEVICES; NANOTECHNOLOGY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SENSORS; SUBSTRATES;

C-V MEASUREMENTS; I-V MEASUREMENTS; ONE ELECTRON TRAPPING; SI NANOCLUSTERS; SILICON RICH OXIDE (SRO);

ELECTRON TRAPS;

EID: 3242885390     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.01.004     Document Type: Article

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