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Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 637-644

The conduction properties of the silicon/off-stoichiometry-SiO2 diode

(5) Aceves, M a Falcony, C b Reynoso Hernandez, A c Calleja, W a Torres, A a

a INSTITUTO NACIONAL DE ASTROFÍSICA (Mexico)

b DEPARTAMENTO DE FÍSICA (Mexico)

c CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY;

SILICON RICH OXIDE; TRAP DENSITY;

SEMICONDUCTOR DIODES;

EID: 0030151545 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00174-3 Document Type: Article

Times cited : (31)

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