EEPROM transistor fabricated with stacked SiOx LPCVD films

Electronics Letters

Volumn 34, Issue 13, 1998, Pages 1294-1296

  Calleja, W ^a   Aceves, M ^a   Falcony, C ^b  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTEGRATED CIRCUIT MANUFACTURE; MIS DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM);

PROM;

EID: 0032092968     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980939     Document Type: Article

References (8)

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2. 4 films', J. Electrochem. Soc., 1978, 125, (5), pp. 819-823
3. LIN, C.-J., et al.: 'Enhanced tunneling characteristics of PECVD silicon-rich oxide (SRO) for the application in low voltage flash EEPROM', IEEE Trans. Electron Devices, 1996, 43, (11), pp. 2021-2023
4. 2', IEEE Trans. Electron Devices, 1996, 43, (9), pp. 1374-1381
5. 2 as a function of excess silicon content and thermal treatments', Thin Solid Films, 1995, 270, pp. 114-117
6. CALLEJA, W.: 'Uso y caracterización de óxidos no estequiométricos en estructuras de memoria MOS'. Thesis for Doctor of Science in Electrical Engineering, CINVESTAV-IPN; Mexico, April 1996
7. 2 diode', Solid-State Electron., 1996, 39, (5), pp. 637-644
8. 2 films by optical and surface analysis techniques', J. Electrochem. Soc., 1997, 144, (1), pp. 379-383