Characterization of excess Si in nonstoichiometric SiO2 films by optical and surface analysis techniques

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 379-383

  Falcony, C ^a   Calleja, W ^b   Aceves, M ^b   Siqueiros, J M ^c   Machorro, R ^c   Cota Araiza, L ^c   Soto, G ^c   Farias M H ^c  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^c UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; AUGER ELECTRON SPECTROSCOPY; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; ELLIPSOMETRY; INFRARED SPECTROSCOPY; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

EXCESS SILICON; LOW PRESSURE CHEMICAL VAPOR DEPOSITION TECHNIQUE; NONSTOICHIOMETRIC SILICON DIOXIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0030786844     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837414     Document Type: Article

References (23)

1. D. J. DiMaria, D. W. Dong, C. Falcony, T. N. Theis, J. R. Kirthley, J. C. Tsang, D. R. Young, F. I. Pesavento, and S. D. Brorson, J. Appl. Phys., 54, 5801 (1983).
2. M. J. B. Bolt, and J. G. Simmons, Solid-State Electron., 30, 533 (1987).
3. D. J. DiMaria, D. W. Dong, J. Appl. Phys., 51, 2722 (1980).
4. T. Matsushita, T. Aoki, T. Ohtsu, H. Yamamoto, H. Yayashi, M. Okayama, and Kawana, IEEE Trans. Electron Devices, ED-23, 826 (1976).
5. D. W. Dong, E. A. Irene, and D. R. Young, This Journal, 125, 819 (1978).
6. N. Zommer, IEEE Trans. Electron Devices, ED-27, 2056 (1980).
7. W. Calleja, C. Falcony, A. Torres, M. Aceves, and R. Osorio, Thin Solid Films, 270, 114 (1995).
8. A. Harstein, J. C. Tsang, D. J. DiMaria, and D. W. Dong, Appl. Phys. Lett., 36, 836 (1980).
9. W. A. Pliskin and H. S. Lehman, This Journal, 112, 1013 (1965).
10. G. Lucovsky and S. Y. Lin, J. Vac. Sci. Technol., B3, 1122 (1985).
11. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol., A4, 689 (1986).
12. K. T. Chang, C. Lam, and K. Rose, in Polysilicon Films and Interfaces, C. Y. Wang, C. V. Thompson, and K. N. Tu, Editors, Vol. 106, p. 107, MRS (1988).
13. Instruction manual 60838192C, CAMECA, 103 Ba. St Denis BP6, 92403 Courbevoie Cedex, France.
14. A. C. Adams, Solid State Technol., 4, 135 (1983).
15. J. C. M. Garnett, Philos. Trans. R., Soc. (London), 203, 385 (1904).
16. D. E. Aspnes and A. A. Studna, Phys. Rev. B, 27, 985 (1983).
17. J. P. Borgogno, B. Lazarides, and E. Pelletier, Appl. Opt., 21, 4020 (1982).
18. See, for example, J. C. Nash, Compact Numerical Methods for Computers, p. 211, Adam Holger, Bristol (1990).
19. A. Ortiz, S. Lopez, C. Falcony, M. H. Farias, L. CotaAraiza, and G. Soto, J. Electron. Mater., 19, 1411 (1990).
20. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal., 20, 77 (1993).
21. Practical Surface Analysis, Vol. 1, 2nd ed., D. Briggs and M. P. Seah, Editors, John Wiley & Sons, Ltd., Chichester (1990).
22. I. Bertoti, R. Kelly, M. Mohai, and A. Toh, Surf. Interface Anal., 19, 291 (1992).
23. P. Bruesch, Th. Stockmeier, F. Stucki, and P. A. Buffat, J. Appl. Phys., 73, 7677 (1993).