Susceptibility of SiO2, ZrO2, and HfO2 dielectrics to moisture contamination

AIChE Journal

Volumn 50, Issue 8, 2004, Pages 1881-1888

  Raghu, Prashant ^a   Yim, Chris ^a   Shadman, Farhang ^a   Shero, Eric ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b ASM AMERICA   (United States)

Author keywords

Adsorption; Hafnium dioxide; Moisture; Outgassing; Zirconium dioxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONTAMINATION; HAFNIUM COMPOUNDS; MOISTURE CONTROL; REACTION KINETICS; ZIRCONIUM COMPOUNDS;

KINETIC PARAMETERS; MOISTURE CONTAMINATION;

SILICON COMPOUNDS;

HAFNIUM DIOXIDE; METAL OXIDE; SILICON DIOXIDE; UNCLASSIFIED DRUG; ZIRCONIUM OXIDE;

MOISTURE;

ARTICLE; CONTAMINATION; DIELECTRIC CONSTANT; ELECTROCHEMISTRY; MOISTURE; SEMICONDUCTOR;

EID: 3242779352     PISSN: 00011541     EISSN: None     Source Type: Journal    
DOI: 10.1002/aic.10148     Document Type: Article

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