SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 149, Issue 5, 2002, Pages

Kinetics and mechanism of carbon incorporation in ultrathin silicon-based dielectric films

(3) Rana, Niraj a Raghu, Prashant a Shadman, Farhang a

a University of Arizona (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CARBON; CHEMISORPTION; CRYSTAL DEFECTS; DESORPTION; PYROLYSIS; RATE CONSTANTS; SILICON; SURFACE REACTIONS; THERMOOXIDATION; ULTRATHIN FILMS;

POLAR ORGANICS;

DIELECTRIC FILMS;

EID: 0036572721 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1466863 Document Type: Article

Times cited : (17)

References (36)

1
- 0030263870
- (1996) J. Electrochem. Soc. , vol.143 , pp. 3279
- Saga, K.¹ Hattori, T.²

2
- 0009241584
- (1999) J. Electrochem. Soc. , vol.146 , pp. 2730
- Sugimoto, F.¹ Okamura, S.²

3
- 0009159140
- J. Ruzyllo and R. R. Novak, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
- (1998) Cleaning Technology in Semiconductor Device Manufacturing V , vol.PV 97-35 , pp. 513
- Tanishima, M.¹ Abe, N.²

4
- 0030196440
- (1996) Jpn. J. Appl. Phys., Part 2 , vol.7 A
- Takahagi, T.¹ Shingubara, S.² Sakaue, H.³ Hoshino, K.⁴ Yashima, H.⁵

5
- 0029541012
- IEEE
- (1995) Proceedings of the 1995 IEEE/SEMI Advanced Semiconductor Manufacturing Conference , pp. 322
- Tamaoki, M.¹ Nishiki, K.² Shimazaki, A.³ Sasaki, Y.⁴ Yanagi, S.⁵

6
- 0345775583
- (2001) Microcontamination , vol.19 , pp. 41
- Kumar, A.¹ Ahmed, L.² Camenzind, M.³

7
- 0029510409
- (1995) Mater. Res. Soc. Symp. Proc. , vol.386 , pp. 143
- Lee, J.J.¹ Odom, R.W.² Strossman, G.S.³ Lindley, P.M.⁴

8
- 0009243128
- R. E. Novak and J. Ruzyllo, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
- (1995) Cleaning Technology in Semiconductor Device Manufacturing IV , vol.PV 95-20 , pp. 323
- Shimazaki, A.¹ Tamaoki, M.² Sasaki, Y.³

9
- 0003027238
- IEEE
- (1995) IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing , pp. 171
- Saito, M.¹

10
- 0029276010
- (1995) J. Electrochem. Soc. , vol.142 , pp. 888
- Budde, K.J.¹ Holzapfel, W.J.² Beyer, M.M.³

11
- 0001544025
- (1991) Appl. Phys. Lett. , vol.59 , pp. 108
- Kasi, S.R.¹ Liehr, M.² Thiry, P.A.³ Dallaporta, H.⁴ Offenberg, M.⁵

12
- 21144462599
- (1992) J. Vac. Sci. Technol. A , vol.10 , pp. 795
- Kasi, S.R.¹ Liehr, M.²

13
- 0025844672
- Extended Abstracts, Business Center for Academic Societies, Tokyo, Japan
- (1991) 1991 International Conference on Solid State Devices and Materials , pp. 243
- Hashimoto, K.¹ Egashira, K.² Suzuki, M.³ Matsunaga, D.⁴

14
- 0009157323
- (1990) J. Appl. Phys. , vol.67 , pp. 4
- Kim, K.¹ Maillot, P.² Morgan, A.³ Kermani, A.⁴ Ku, Y.⁵

15
- 33646217603
- Materials Research Society Proceedings Series, Pittsburgh, PA
- (1997) Science and Technology of Semiconductor Surface Preparation , pp. 101
- Imafuku, D.¹ Mizubayashi, W.² Miyazaki, S.³ Hirose, M.⁴

16
- 4243690898
- K. B. Sundaram, M. J. Deen, W. D. Brown, R. E. Sah, E. Poindexter, and D. Misra, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
- (1999) Silicon Nitride and Silicon Dioxide Thin Insulating Films , vol.PV 99-6 , pp. 250
- Jeon, J.¹ Watanabe, S.² Tanishima, M.³ Sugimoto, F.⁴ Ogle, B.⁵

17
- 0032063845
- (1998) Jpn. J. Appl. Phys., Part 1 , vol.37 , pp. 2468
- Ogata, T.¹ Ban, C.² Ueyama, A.³ Muranaka, S.⁴ Hayashi, T.⁵ Kobayashi, K.⁶ Kobayashi, J.⁷ Kurokawa, H.⁸ Ohno, Y.⁹ Hirayama, M.¹⁰

18
- 0032154614
- (1998) Jpn. J. Appl. Phys., Part 1 , vol.37 , pp. 4649
- Gendt, S.D.¹ Knotter, D.M.² Kenis, K.³ Depas, M.⁴ Meuris, M.⁵ Mertens, P.⁶ Heyns, M.M.⁷

19
- 0031349185
- IEEE
- (1995) 1997 IEEE International Symposium on Semiconductor Manufacturing Proceedings
- Jimbo, T.¹ Sakai, S.² Katuyama, K.³ Ito, M.⁴ Tomioka, H.⁵

20
- 0025505359
- (1990) J. Electrochem. Soc. , vol.137 , pp. 3287
- Hossain, S.D.¹ Pantano, C.G.² Ruzyllo, J.³

21
- 0014935659
- (1971) J. Appl. Phys. , vol.42 , pp. 1208
- Henderson, R.C.¹ Marcus, R.B.² Polito, W.J.³

22
- 0000998950
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3670
- Saga, K.¹ Hattori, T.²

23
- 36549099808
- (1989) J. Chem. Phys. , vol.91 , pp. 2712
- Tanaka, S.¹ Onchi, M.² Nishijima, M.³

24
- 0001069898
- (1993) Thin Solid Films , vol.225 , pp. 196
- Cheng, C.C.¹ Taylor, P.A.² Wallace, R.M.³ Gutleben, H.⁴ Clemen, L.⁵ Colaianni, M.L.⁶ Chen, P.J.⁷ Weinberg, W.H.⁸ Choyke, W.J.⁹ Yates J.T., Jr.¹⁰

25
- 0000670274
- (1992) J. Am. Chem. Soc. , vol.114 , pp. 6754
- Taylor, P.A.¹ Wallace, R.M.² Cheng, C.C.³ Weinberg, W.H.⁴ Dresser, M.J.⁵ Choyke, W.J.⁶ Yates J.T., Jr.⁷

26
- 0032182571
- (1998) Surf Sci. , vol.416 , pp. 354
- Liu, H.¹ Hamers, R.J.²

27
- 0001596993
- (1991) J. Phys.: Condens. Matter , vol.3
- Yates J.T., Jr.¹

28
- 4243545510
- R. E. Novak and J. Ruzyllo, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
- (1995) Cleaning Technology in Semiconductor Device Manufacturing IV , vol.PV 95-20 , pp. 455
- Chidsey, C.¹ Linford, M.²

29
- 0031169219
- (1997) Surf. Sci. , vol.382
- Bitzer, T.¹ Richardson, N.V.² Schiffrin, D.J.³

30
- 0030392490
- (1996) Surf. Sci. , vol.368 , pp. 202
- Bitzer, T.¹ Alkunshalie, T.² Richardson, N.V.³

31
- 0022790628
- (1986) Jpn. J. Appl. Phys., Part 1 , vol.25 , pp. 1608
- Yokota, K.¹ Kimura, M.² Kojima, K.³

32
- 36849120091
- (1962) J. Appl. Phys. , vol.33 , pp. 2089
- Lander, J.J.¹ Morrison, J.²

33
- 0028764530
- (1994) J. Non-Cryst. Solids , vol.179 , pp. 345
- Takakuwa, Y.¹ Nihei, M.² Horie, T.³ Miyamoto, N.⁴

34
- 0009295452
- Ph.D. Dissertation, University of Arizona, Tucson, AZ
- (2002)
- Rana, N.¹

35
- 0000074652
- P. C. Andricacos, J. O. Dukovic, G. S. Mathad, G. M. Oleszek, H. S. Rathore, and C. Reidsema Simpson, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
- (1999) Electrochemical Processing in ULSI Fabrication I and Interconnect and Contact Metallization: Materials, Processes, and Reliability , vol.PV 98-6 , pp. 112
- Verghese, M.¹ Shero, E.² Shadman, F.³

36
- 0000338967
- (1957) Trans. Faraday Soc. , vol.53 , pp. 1423
- Barnard, J.A.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.