Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM)

Surface and Interface Analysis

Volumn 27, Issue 5, 1999, Pages 486-490

  Dziomba, Th ^a   Sulzbach, Th ^b   Ohlsson, O ^b   Lehrer, Ch ^c   Frey, L ^c   Danzebrink, H U ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b Nanosensors Dr Olaf Wolter GmbH   (Germany)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; COATINGS; IMAGE PROCESSING; ION BEAMS; LIGHT POLARIZATION; OPTICAL MICROSCOPY; OPTICAL RESOLVING POWER; REFLECTION; SILICON;

APERTURE PROBES; CROSS POLARIZED REFLECTION MODE; FOCUSED ION BEAM TECHNIQUE; METAL LAYER; NEAR INFRARED SCANNING NEAR FIELD OPTICAL MICROSCOPY; OPAQUE COATING; POLYHEDRAL; SIGNAL AMPLITUDE;

PROBES;

EID: 0032643999     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199905/06)27:5/6<486::AID-SIA498>3.0.CO;2-6     Document Type: Article

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