Reduction of etch pits of electropolished Cu by additives

Journal of the Electrochemical Society

Volumn 151, Issue 7, 2004, Pages

  Shieh, Jia Min ^a   Chang, Shih Chieh ^b   Wang, Ying Lang ^b   Dai, Bau Tong ^a   Cheng, Shih Song ^c   Ting, Jack ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c Merck Electronic Chemicals Limited   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; CHEMICAL MECHANICAL POLISHING; DIFFUSION; ELECTROCHEMISTRY; ELECTROLYTES; ELECTROLYTIC POLISHING; ETCHING; PITTING; POLYETHYLENE GLYCOLS; REDUCTION; SCANNING ELECTRON MICROSCOPY;

COPPER ELECTROPLATING; ELECTROCHEMICAL ANALYSIS; FIELD EMISSION SCANNING ELECTRON MICROSCOPE (FESEM); PLANARIZATION EFFICIENCY (PE);

COPPER;

EID: 3242707119     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1757461     Document Type: Article

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