Newly developed electro-chemical polishing process of copper as replacement of CMP suitable for damascene copper inlaid in fragile low-k dielectrics

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 84-87

  Sato, Shuzo ^a   Yasuda, Zenya ^a   Ishihara, Masao ^a   Komai, Naoki ^a   Ohtorii, Hiizu ^a   Yoshio, Akira ^a   Segawa, Yuji ^a   Horikoshi, Hiroshi ^a   Ohoka, Yutaka ^a   Tai, Kaori ^a   Takahashi, Shingo ^a   Nogami, Takeshi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DISSOLUTION; ELECTROLYTIC POLISHING; PERMITTIVITY; PRESSURE; REMOVAL; SCANNING ELECTRON MICROSCOPY;

DAMASCENE COPPER INLAID; ELECTROCHEMICAL DISSOLUTION; PLANARIZATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0035718109     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979413     Document Type: Article

References (0)