Effect of electric field on chemical mechanical polishing of langasite

Wear

Volumn 249, Issue 5-6, 2001, Pages 397-400

  Lim, Dae Soon ^a,b   Yoon, In Ho ^a   Danyluk, Steven ^c  

^a Korea University   (South Korea)

^b Hanyang University   (South Korea)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

CMP; Electric field; Langasite; Slurry

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC FIELDS; HARDNESS; SILICA; SINGLE CRYSTALS; SURFACE CHEMISTRY;

SILICA SLURRY;

POLISHING;

ELECTRIC FIELD; PIEZOELECTRICITY; POLISHING; SLURRY;

EID: 0035360346     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0043-1648(01)00544-0     Document Type: Article

References (13)

1. Filter and resonator using langasite
2. 14 (langasite) single crystals
3. Application of langasite crystals in monolitic filters operating in shear modes
4. New Piezoelectric materials
5. Surface defects in GaAs wafer processes
6. 2 films
7. Polishing and etching langasite and quartz crystal
8. Effect of slurry viscosity modification on oxide and tungsten CMP
9. Slurry film thickness measurement in float and semi-permeable polishing pad geometries
10. An electrochemical effect in semiconductors
11. Chemomechanical effect in doped and intrinsic silicon
12. Kinkenbildung in geladenen Versetzungen